18 March 2016 Demonstration of an N7 integrated fab process for metal oxide EUV photoresist
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Abstract
Inpria has developed a directly patternable metal oxide hard-mask as a robust, high-resolution photoresist for EUV lithography. In this paper we demonstrate the full integration of a baseline Inpria resist into an imec N7 BEOL block mask process module. We examine in detail both the lithography and etch patterning results. By leveraging the high differential etch resistance of metal oxide photoresists, we explore opportunities for process simplification and cost reduction. We review the imaging results from the imec N7 block mask patterns and its process windows as well as routes to maximize the process latitude, underlayer integration, etch transfer, cross sections, etch equipment integration from cross metal contamination standpoint and selective resist strip process. Finally, initial results from a higher sensitivity Inpria resist are also reported. A dose to size of 19 mJ/cm2 was achieved to print pillars as small as 21nm.
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Danilo De Simone, Ming Mao, Michael Kocsis, Peter De Schepper, Frederic Lazzarino, Geert Vandenberghe, Jason Stowers, Stephen Meyers, Benjamin L. Clark, Andrew Grenville, Vinh Luong, Fumiko Yamashita, Doni Parnell, "Demonstration of an N7 integrated fab process for metal oxide EUV photoresist", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760B (18 March 2016); doi: 10.1117/12.2220051; https://doi.org/10.1117/12.2220051
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