Patterning performance of chemically amplified resist in EUV lithography

Tatsuya Fujii; Shogo Matsumaru; Tomotaka Yamada; Yoshitaka Komuro; Daisuke Kawana; Katsumi Ohmori

doi:10.1117/12.2218417

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18 March 2016 Patterning performance of chemically amplified resist in EUV lithography

Tatsuya Fujii, Shogo Matsumaru, Tomotaka Yamada, Yoshitaka Komuro, Daisuke Kawana, Katsumi Ohmori

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Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97760Y (2016) https://doi.org/10.1117/12.2218417
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Extreme Ultra Violet (EUV) lithography is one of the most promising candidate technologies for the high-volume manufacturing (HVM) of semiconductor devices at the sub-14 nm half pitch lines and spaces (LS) pattern for 7 nm node and beyond. EUV resists is strongly required high resolution (R) with high sensitivity (S) and low line edge/ width roughness (L) for HVM application. Experimental results on chemically amplified (CA) resist will be shown to study the influence of proton source, photo acid generator (PAG) cation and the other materials on lithographic performance, and then resist formulation designed for improving RLS trade-off will be discussed.

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Tatsuya Fujii, Shogo Matsumaru, Tomotaka Yamada, Yoshitaka Komuro, Daisuke Kawana, and Katsumi Ohmori "Patterning performance of chemically amplified resist in EUV lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97760Y (18 March 2016); https://doi.org/10.1117/12.2218417

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