18 March 2016 Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography
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Abstract
We have recently introduced a new molecular resist system that demonstrates high-resolution capability. A series of studies such as quencher choice and loading was conducted in order to optimize the performance of this material. The optimized conditions allowed patterning 14 nm half-pitch (hp) lines with a line width roughness (LWR) of 3.56 nm at the XIL beamline of the Swiss Light source. Furthermore it was possible to resolve 11 nm hp features with 5.9 nm LWR. First exposure results on an NXE3300 are also presented. We have also begun to investigate the addition of metals to EUV photoresist as a means to increase sensitivity and modify secondary electron blur. Initial results for one of the metal additives show that the sensitivity could be enhanced by up to 60 percent.
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Andreas Frommhold, Andreas Frommhold, Alexandra McClelland, Alexandra McClelland, John Roth, John Roth, Roberto A. Fallica, Roberto A. Fallica, Yasin Ekinci, Yasin Ekinci, Alex P. G. Robinson, Alex P. G. Robinson, "Optimization and sensitivity enhancement of high-resolution molecular resist for EUV lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977614 (18 March 2016); doi: 10.1117/12.2219221; https://doi.org/10.1117/12.2219221
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