18 March 2016 Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks
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Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the 7 nm technology node and beyond. EUV photomasks with alternative materials to the commonly used Mo/Si multilayer (ML) reflector and patterned Ta-based absorber (both of which are known to require shadow effect corrections and lead to large through-focus pattern placement errors) are being actively explored. Because the reflective bandwidth of a Ru/Si ML is significantly wider than the reflective bandwidth of a Mo/Si ML and the effective reflectance plane in Ru/Si is closer to the ML surface, Ru/Si ML coatings may be viable alternatives to the Mo/Si ML coatings that are commercially available today because they will lead to smaller mask 3D effects. In this paper, increases in the peak reflectivity and the reflective bandwidth of Ru/Si ML reflectors by using B4C interlayers to improve the Ru-Si interfaces are discussed. The conclusions of this paper are supported with the results of both experimental measurements and rigorous simulations.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Obert Wood, Obert Wood, Keith Wong, Keith Wong, Valentin Parks, Valentin Parks, Patrick Kearney, Patrick Kearney, Julia Meyer-Ilse, Julia Meyer-Ilse, Vu Luong, Vu Luong, Vicky Philipsen, Vicky Philipsen, Mohammad Faheem, Mohammad Faheem, Yifan Liang, Yifan Liang, Ajay Kumar, Ajay Kumar, Esther Chen, Esther Chen, Corbin Bennett, Corbin Bennett, Bianzhu Fu, Bianzhu Fu, Michael Gribelyuk, Michael Gribelyuk, Wayne Zhao, Wayne Zhao, Pawitter Mangat, Pawitter Mangat, Paul Van der Heide, Paul Van der Heide, } "Improved Ru/Si multilayer reflective coatings for advanced extreme-ultraviolet lithography photomasks", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977619 (18 March 2016); doi: 10.1117/12.2219215; https://doi.org/10.1117/12.2219215


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