18 March 2016 High-NA EUV projection lens with central obscuration
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Abstract
The lenses with coaxial mirrors allow obtain NA values up to of 0.8 and demagnification β ≥10. The larger β value leads to the mask cost reducing, as in this case, the elements of the IC pattern template can be made bigger and, therefore, with fewer defects. Сoaxial schemes can engender a problem of the image plane shift beyond the projection lens element boundaries near the wafer. The projection lens consisting of four coaxial mirrors with NA= 0.485 and s = 12 combined with the ”Vanguard” imaging subsystem have been designed. According to the computation the circuit features at 10 nm in center and 20 nm on the edge of 12.4 mm field of view can be imaged.
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A. P. Zhevlakov, R. P. Seisyan, V. G. Bespalov, V. V. Elizarov, A. S. Grishkanich, S. V. Kascheev, A. A. Bagdasarov, I. S. Sidorov, "High-NA EUV projection lens with central obscuration", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761L (18 March 2016); doi: 10.1117/12.2219933; https://doi.org/10.1117/12.2219933
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