EUV patterning successes and frontiers

Nelson Felix; Dan Corliss; Karen Petrillo; Nicole Saulnier; Yongan Xu; Luciana Meli; Hao Tang; Anuja De Silva; Bassem Hamieh; Martin Burkhardt; Yann Mignot; Richard Johnson; Chris Robinson; Mary Breton; Indira Seshadri; Derren Dunn; Stuart Sieg; Eric Miller; Genevieve Beique; Andre Labonte; Lei Sun; Geng Han; Erik Verduijn; Eunshoo Han; Bong Cheol Kim; Jongsu Kim; Koichi Hontake; Lior Huli; Corey Lemley; Dave Hetzer; Shinichiro Kawakami; Koichi Matsunaga

doi:10.1117/12.2219894

18 March 2016 EUV patterning successes and frontiers

Nelson Felix, Dan Corliss, Karen Petrillo, Nicole Saulnier, Yongan Xu, Luciana Meli, Hao Tang, Anuja De Silva, Bassem Hamieh, Martin Burkhardt, Yann Mignot, Richard Johnson, Chris Robinson, Mary Breton, Indira Seshadri, Derren Dunn, Stuart Sieg, Eric Miller, Genevieve Beique, Andre Labonte, Lei Sun, Geng Han, Erik Verduijn, Eunshoo Han, Bong Cheol Kim, Jongsu Kim, Koichi Hontake, Lior Huli, Corey Lemley, Dave Hetzer, Shinichiro Kawakami, Koichi Matsunaga

Author Affiliations +

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 97761O (2016) https://doi.org/10.1117/12.2219894
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The feature scaling and patterning control required for the 7nm node has introduced EUV as a candidate lithography technology for enablement. To be established as a front-up lithography solution for those requirements, all the associated aspects with yielding a technology are also in the process of being demonstrated, such as defectivity process window through patterning transfer and electrical yield. This paper will review the current status of those metrics for 7nm at IBM, but also focus on the challenges therein as the industry begins to look beyond 7nm. To address these challenges, some of the fundamental process aspects of holistic EUV patterning are explored and characterized. This includes detailing the contrast entitlement enabled by EUV, and subsequently characterizing state-of-the-art resist printing limits to realize that entitlement. Because of the small features being considered, the limits of film thinness need to be characterized, both for the resist and underlying SiARC or inorganic hardmask, and the subsequent defectivity, both of the native films and after pattern transfer. Also, as we prepare for the next node, multipatterning techniques will be validated in light of the above, in a way that employs the enabling aspects of EUV as well. This will thus demonstrate EUV not just as a technology that can print small features, but one where all aspects of the patterning are understood and enabling of a manufacturing-worthy technology.

Citation Download Citation

Nelson Felix, Dan Corliss, Karen Petrillo, Nicole Saulnier, Yongan Xu, Luciana Meli, Hao Tang, Anuja De Silva, Bassem Hamieh, Martin Burkhardt, Yann Mignot, Richard Johnson, Chris Robinson, Mary Breton, Indira Seshadri, Derren Dunn, Stuart Sieg, Eric Miller, Genevieve Beique, Andre Labonte, Lei Sun, Geng Han, Erik Verduijn, Eunshoo Han, Bong Cheol Kim, Jongsu Kim, Koichi Hontake, Lior Huli, Corey Lemley, Dave Hetzer, Shinichiro Kawakami, and Koichi Matsunaga "EUV patterning successes and frontiers", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761O (18 March 2016); https://doi.org/10.1117/12.2219894

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available