18 March 2016 EUV patterning successes and frontiers
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Abstract
The feature scaling and patterning control required for the 7nm node has introduced EUV as a candidate lithography technology for enablement. To be established as a front-up lithography solution for those requirements, all the associated aspects with yielding a technology are also in the process of being demonstrated, such as defectivity process window through patterning transfer and electrical yield. This paper will review the current status of those metrics for 7nm at IBM, but also focus on the challenges therein as the industry begins to look beyond 7nm. To address these challenges, some of the fundamental process aspects of holistic EUV patterning are explored and characterized. This includes detailing the contrast entitlement enabled by EUV, and subsequently characterizing state-of-the-art resist printing limits to realize that entitlement. Because of the small features being considered, the limits of film thinness need to be characterized, both for the resist and underlying SiARC or inorganic hardmask, and the subsequent defectivity, both of the native films and after pattern transfer. Also, as we prepare for the next node, multipatterning techniques will be validated in light of the above, in a way that employs the enabling aspects of EUV as well. This will thus demonstrate EUV not just as a technology that can print small features, but one where all aspects of the patterning are understood and enabling of a manufacturing-worthy technology.
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Nelson Felix, Nelson Felix, Dan Corliss, Dan Corliss, Karen Petrillo, Karen Petrillo, Nicole Saulnier, Nicole Saulnier, Yongan Xu, Yongan Xu, Luciana Meli, Luciana Meli, Hao Tang, Hao Tang, Anuja De Silva, Anuja De Silva, Bassem Hamieh, Bassem Hamieh, Martin Burkhardt, Martin Burkhardt, Yann Mignot, Yann Mignot, Richard Johnson, Richard Johnson, Chris Robinson, Chris Robinson, Mary Breton, Mary Breton, Indira Seshadri, Indira Seshadri, Derren Dunn, Derren Dunn, Stuart Sieg, Stuart Sieg, Eric Miller, Eric Miller, Genevieve Beique, Genevieve Beique, Andre Labonte, Andre Labonte, Lei Sun, Lei Sun, Geng Han, Geng Han, Erik Verduijn, Erik Verduijn, Eunshoo Han, Eunshoo Han, Bong Cheol Kim, Bong Cheol Kim, Jongsu Kim, Jongsu Kim, Koichi Hontake, Koichi Hontake, Lior Huli, Lior Huli, Corey Lemley, Corey Lemley, Dave Hetzer, Dave Hetzer, Shinichiro Kawakami, Shinichiro Kawakami, Koichi Matsunaga, Koichi Matsunaga, } "EUV patterning successes and frontiers", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761O (18 March 2016); doi: 10.1117/12.2219894; https://doi.org/10.1117/12.2219894
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