18 March 2016 Extension of practical k1 limit in EUV lithography
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Abstract
Sub 0.3k1 regime has been widely adopted for high volume manufacturing (HVM) of optical lithography due to various resolution enhancement technologies (RETs). It is not certain when such low k1 is feasible in EUV, though most technologies are available in EUV also. In this paper, experimental results on patterning performance of line space (L/S) and contact hole (C/H) in EUV lithography will be presented. First, practical k1 value with 0.33NA EUV lithography was investigated through experiment using NXE3300 EUV tool. Patterning limit, as defined by local critical dimension uniformity (LCDU) for C/H array pattern were measured with respect to various design rules. It was evaluated that the effect of off axis illumination (OAI) mode with various illumination conditions to improve the patterning performance and to reduce k1 limit. Then the experimental results of LCDU were compared with normalized image log slope (NILS) values from simulation. EUV source mask optimization (SMO) technologies to increase NILS with FlexPupil option of EUV scanner were evaluated and possibility of further improvement was also discussed.
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Sarohan Park, Sarohan Park, Inwhan Lee, Inwhan Lee, Sunyoung Koo, Sunyoung Koo, Junghyung Lee, Junghyung Lee, Chang-Moon Lim, Chang-Moon Lim, } "Extension of practical k1 limit in EUV lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97761Q (18 March 2016); doi: 10.1117/12.2219546; https://doi.org/10.1117/12.2219546
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