Stress-induced pellicle analysis for extreme-ultraviolet lithography

Eun-Sang Park; Min-Ha Kim; Sollee Hwang; Jung Hwan Kim; Hye-Keun Oh

doi:10.1117/12.2218219

18 March 2016 Stress-induced pellicle analysis for extreme-ultraviolet lithography

Eun-Sang Park, Min-Ha Kim, Sollee Hwang, Jung Hwan Kim, Hye-Keun Oh

Proceedings Volume 9776, Extreme Ultraviolet (EUV) Lithography VII; 977626 (2016) https://doi.org/10.1117/12.2218219
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The defect on the extreme ultraviolet (EUV) mask can cause image quality degradation on the wafer and also poses a serious problem for achieving high volume manufacturing (HVM). Using a pellicle could decrease the critical size of a defect by taking the defect away from the focal plane of a mask. Considering the double pass transmission for the thickness of extreme ultraviolet lithography EUVL pellicle should be ~ nm thin. For ~ nm thin pellicle, the thermal stress by EUV light exposure may damage the pellicle. Therefore, an investigation of thermal stress is desired for reliable EUV light transmission through pellicle. Therefore, we calculated the total stress and compared with material maximum stress of the pellicle. Breaking or the safety of the pellicle could be determined by the induced total stress, however, the cyclic exposure heating could decrease the material maximum stress of the pellicle. The c-Si (crystalline silicon) has good mechanical durability than the p-Si (poly-crystalline silicon) under cyclic thermal exposure.

Citation Download Citation

Eun-Sang Park, Min-Ha Kim, Sollee Hwang, Jung Hwan Kim, and Hye-Keun Oh "Stress-induced pellicle analysis for extreme-ultraviolet lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977626 (18 March 2016); https://doi.org/10.1117/12.2218219

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