18 March 2016 LWR and defectivity improvement on EUV track system
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Abstract
EUV lithography (EUVL) is well known to be a strong candidate for next generation, single exposure sub-30nm halfpitch lithography.[1] Furthermore, high-NA EUV exposure tool(s) released two years ago gave a strong impression by finer pattern results. On the other hand, it seems that the coat-develop track process remains very similar and in many aspects returns to KrF or ArF dry process fundamentals, but in practice a 26-32nm pitch patterning coat develop track process also has challenges with EUV resists. As access to EUV lithography exposures has become more readily available over the last five (5) years, several challenges and accomplishments in the track process have been reported, such as the improvement of ultra-thin film coating, CD uniformity, defectivity, line width roughness (LWR), and so on.[2-8] The coat-develop track process has evolved along with novel materials and metrology capability. Line width roughness (LWR) control and defect reduction are demonstrated utilizing the SOKUDO DUO coat-develop track system with ASML NXE:3100 and NXE:3300 exposures in the IMEC (Leuven, Belgium) cleanroom environment. Additionally, we will show the latest lithographic results obtained by novel processing approaches in the EUV coat develop track system.
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Masahiko Harumoto, Harold Stokes, Yan Thouroude, Koji Kaneyama, Charles Pieczulewski, Masaya Asai, "LWR and defectivity improvement on EUV track system", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 977628 (18 March 2016); doi: 10.1117/12.2218947; https://doi.org/10.1117/12.2218947
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