18 March 2016 Feasibility of a new absorber material for high NA extreme ultraviolet lithography
Author Affiliations +
The extreme-ultraviolet lithography (EUVL) has been regarded as the best candidate to achieve high resolution patterning below 1x nm node. From the Rayleigh criterion, a numerical aperture (NA) should be increased to make the high resolution pattern. A new absorber structure which has sufficient image contrast and small height is needed for realization of high NA optics. In this study, 28 nm-thick ruthenium oxide (RuO2) is suggested for the absorber material. We could obtain higher image contrast and better H-V bias by using the RuO2 absorber compared to the other materials such as TaN and TaBN.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ki-Ho Ko, Hye-Keun Oh, "Feasibility of a new absorber material for high NA extreme ultraviolet lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97762J (18 March 2016); doi: 10.1117/12.2219576; https://doi.org/10.1117/12.2219576


Writing time estimation of EB mask writer EBM 9000 for...
Proceedings of SPIE (October 17 2014)
Extension of practical k1 limit in EUV lithography
Proceedings of SPIE (March 18 2016)
Influences of various defects on extreme ultra-violet mask
Proceedings of SPIE (December 04 2008)
Phase-shifting effect of thin-absorber EUV masks
Proceedings of SPIE (October 13 2011)
Comparison between ADT and PPT for 2X DRAM patterning
Proceedings of SPIE (April 08 2011)

Back to Top