18 March 2016 Feasibility of a new absorber material for high NA extreme ultraviolet lithography
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The extreme-ultraviolet lithography (EUVL) has been regarded as the best candidate to achieve high resolution patterning below 1x nm node. From the Rayleigh criterion, a numerical aperture (NA) should be increased to make the high resolution pattern. A new absorber structure which has sufficient image contrast and small height is needed for realization of high NA optics. In this study, 28 nm-thick ruthenium oxide (RuO2) is suggested for the absorber material. We could obtain higher image contrast and better H-V bias by using the RuO2 absorber compared to the other materials such as TaN and TaBN.
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Ki-Ho Ko, Ki-Ho Ko, Hye-Keun Oh, Hye-Keun Oh, "Feasibility of a new absorber material for high NA extreme ultraviolet lithography", Proc. SPIE 9776, Extreme Ultraviolet (EUV) Lithography VII, 97762J (18 March 2016); doi: 10.1117/12.2219576; https://doi.org/10.1117/12.2219576


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