Thirty years have passed since the very first results of EUV imaging were made public by Kinoshita and co-workers of NTT Japan. Why does it take this long for EUV lithography to develop from infancy to near maturity? First, the advent and adoption of several key resolution-enhancing techniques along the way, combined with continual improvements in exposure tools, masks, and materials, greatly extended the life of optical lithography and made the need for EUVL less urgent, until now. Second, technological barriers that must be surmounted in order to put EUVL in manufacturing have indeed been high. In this presentation, I will review the early history of EUVL, point out how its life was extended beyond the initial phase of promising results, and present some most recent progress on the performance of its exposure tools, technology infrastructure, and patterning capability, and hopefully convince the audience that the technology is crossing the threshold to become a mainstream patterning technology for sub-10-nm generations of integrated circuits.