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22 March 2016 Pattern fidelity improvement of chemo-epitaxy DSA process for high-volume manufacturing
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Directed self-assembly (DSA) is one of the candidates for next generation lithography. Over the past few years, cylindrical and lamellar structures dictated by the block co-polymer (BCP) composition have been investigated for use in patterning contact holes or lines, and, Tokyo Electron Limited (TEL is a registered trademark or a trademark of Tokyo Electron Limited in Japan and /or other countries.) has presented the evaluation results and the advantages of each-1-5. In this report, we will present the latest results regarding the defect reduction work on a model line/space system. Especially it is suggested that the defectivity of the neutral layer has a large impact on the defectivity of the DSA patterns. Also, LER/LWR reduction results will be presented with a focus on the improvements made during the etch transferring the DSA patterns into the underlayer.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Makoto Muramatsu, Takanori Nishi, Gen You, Yusuke Saito, Yasuyuki Ido, Kiyohito Ito, Toshikatsu Tobana, Masanori Hosoya, Weichien Chen, Satoru Nakamura, Mark Somervell, and Takahiro Kitano "Pattern fidelity improvement of chemo-epitaxy DSA process for high-volume manufacturing", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770F (22 March 2016);

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