22 March 2016 Directed Self Assembly (DSA) compliant flow with immersion lithography: from material to design and patterning
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Abstract
In this paper, we present a DSA compliant flow for contact/via layers with immersion lithography assuming the grapho-epitaxy process for cylinders’ formation. We demonstrate that the DSA technology enablement needs co-optimization among material, design, and lithography. We show that the number of DSA grouping constructs is countable for the gridded-design architecture. We use Template Error Enhancement Factor (TEEF) to choose DSA material, determine grouping design rules, and select the optimum guiding patterns. Our post-pxOPC imaging data shows that it is promising to achieve 2-mask solution with DSA for the contact/via layer using 193i at 5nm node.
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Yuansheng Ma, Yuansheng Ma, Yan Wang, Yan Wang, James Word, James Word, Junjiang Lei, Junjiang Lei, Joydeep Mitra, Joydeep Mitra, J. Andres Torres, J. Andres Torres, Le Hong, Le Hong, Germain Fenger, Germain Fenger, Daman Khaira, Daman Khaira, Moshe Preil, Moshe Preil, Lei Yuan, Lei Yuan, Jongwook Kye, Jongwook Kye, Harry J. Levinson, Harry J. Levinson, } "Directed Self Assembly (DSA) compliant flow with immersion lithography: from material to design and patterning", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770N (22 March 2016); doi: 10.1117/12.2219505; https://doi.org/10.1117/12.2219505
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