22 March 2016 DSA patterning options for FinFET formation at 7nm node
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Abstract
Several 27nm-pitch directed self-assembly (DSA) processes targeting fin formation for FinFET device fabrication are studied in a 300mm pilot line environment, including chemoepitaxy for a conventional Fin arrays, graphoepitaxy for a customization approach and a hybrid approach for self-aligned Fin cut. The trade-off between each DSA flow is discussed in terms of placement error, Fin CD/profile uniformity, and restricted design. Challenges in pattern transfer are observed and process optimization are discussed. Finally, silicon Fins with 100nm depth and on-target CD using different DSA options with either lithographic or self-aligned customization approach are demonstrated.
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Chi-Chun Charlie Liu, Chi-Chun Charlie Liu, Elliott Franke, Elliott Franke, Fee Li Lie, Fee Li Lie, Stuart Sieg, Stuart Sieg, Hsinyu Tsai, Hsinyu Tsai, Kafai Lai, Kafai Lai, Hoa Truong, Hoa Truong, Richard Farrell, Richard Farrell, Mark Somervell, Mark Somervell, Daniel Sanders, Daniel Sanders, Nelson Felix, Nelson Felix, Michael Guillorn, Michael Guillorn, Sean Burns, Sean Burns, David Hetzer, David Hetzer, Akiteru Ko, Akiteru Ko, John Arnold, John Arnold, Matthew Colburn, Matthew Colburn, } "DSA patterning options for FinFET formation at 7nm node", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97770R (22 March 2016); doi: 10.1117/12.2219670; https://doi.org/10.1117/12.2219670
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