22 March 2016 Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM
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Abstract
For Directed Self-Assembly (DSA) to be deployed in advanced semiconductor technologies, it must reliably integrate into a full process flow. We present a methodology for using virtual fabrication software, including predictive DSA process models, to develop and analyze the replacement of SAQP patterning with LiNe chemoepitaxy on a 14nm DRAM process. To quantify the impact of this module replacement, we investigate a key process yield metric for DRAM: interface area between the capacitor contacts and transistor source/drain. Additionally, we demonstrate virtual fabrication of the DRAM cell’s hexagonally-packed capacitors patterned with an array of diblock copolymer cylinders in place of LE4 patterning.
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Mattan Kamon, Mattan Kamon, Mustafa Akbulut, Mustafa Akbulut, Yiguang Yan, Yiguang Yan, Daniel Faken, Daniel Faken, Andras Pap, Andras Pap, Vasanth Allampalli, Vasanth Allampalli, Ken Greiner, Ken Greiner, David Fried, David Fried, } "Virtual fabrication using directed self-assembly for process optimization in a 14nm DRAM", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 977710 (22 March 2016); doi: 10.1117/12.2218935; https://doi.org/10.1117/12.2218935
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