Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system

A. Kojima; N. Ikegami; T. Yoshida; H. Miyaguchi; M. Muroyama; S. Yoshida; K. Totsu; N. Koshida; M. Esashi

doi:10.1117/12.2219338

22 March 2016 Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system

A. Kojima, N. Ikegami, T. Yoshida, H. Miyaguchi, M. Muroyama, S. Yoshida, K. Totsu, N. Koshida, M. Esashi

Author Affiliations +

Proceedings Volume 9777, Alternative Lithographic Technologies VIII; 977712 (2016) https://doi.org/10.1117/12.2219338
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Developments of a Micro Electro-Mechanical System (MEMS) electrostatic Condenser Lens Array (CLA) for a Massively Parallel Electron Beam Direct Write (MPEBDW) lithography system are described. The CLA converges parallel electron beams for fine patterning. The structure of the CLA was designed on a basis of analysis by a finite element method (FEM) simulation. The lens was fabricated with precise machining and assembled with a nanocrystalline silicon (nc-Si) electron emitter array as an electron source of MPEBDW. The nc-Si electron emitter has the advantage that a vertical-emitted surface electron beam can be obtained without any extractor electrodes. FEM simulation of electron optics characteristics showed that the size of the electron beam emitted from the electron emitter was reduced to 15% by a radial direction, and the divergence angle is reduced to 1/18.

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A. Kojima, A. Kojima, N. Ikegami, N. Ikegami, T. Yoshida, T. Yoshida, H. Miyaguchi, H. Miyaguchi, M. Muroyama, M. Muroyama, S. Yoshida, S. Yoshida, K. Totsu, K. Totsu, N. Koshida, N. Koshida, M. Esashi, M. Esashi, "Development of a MEMS electrostatic condenser lens array for nc-Si surface electron emitters of the Massive Parallel Electron Beam Direct-Write system", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 977712 (22 March 2016); doi: 10.1117/12.2219338; https://doi.org/10.1117/12.2219338

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