22 March 2016 Enhanced patterning by tilted ion implantation
Author Affiliations +
Tilted ion implantation (TII) is proposed as a lower-cost alternative to self-aligned double patterning (SADP) for pitch halving. This new approach is based on an enhancement in etch rate of a hard-mask layer by implant-induced damage. Ar+ implantation into a thin layer of silicon dioxide (SiO2) is shown to enhance its etch rate in dilute hydrofluoric acid (HF) solution, by up to 9× for an implant dose of 3×1014 cm-2. The formation of sub-lithographic features defined by masked tilted Ar+ implantation into a SiO2 hard-mask layer is experimentally demonstrated. Features with sizes as small as ~21 nm, self-aligned to the lithographically patterned mask, are achieved. As compared with SADP, enhanced patterning by TII requires far fewer and lower-cost process steps and hence is expected to be much more cost-effective.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang Wan Kim, Sang Wan Kim, Peng Zheng, Peng Zheng, Kimihiko Kato, Kimihiko Kato, Leonard Rubin, Leonard Rubin, Tsu-Jae King Liu, Tsu-Jae King Liu, "Enhanced patterning by tilted ion implantation", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771B (22 March 2016); doi: 10.1117/12.2218793; https://doi.org/10.1117/12.2218793

Back to Top