22 March 2016 Enhanced patterning by tilted ion implantation
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Abstract
Tilted ion implantation (TII) is proposed as a lower-cost alternative to self-aligned double patterning (SADP) for pitch halving. This new approach is based on an enhancement in etch rate of a hard-mask layer by implant-induced damage. Ar+ implantation into a thin layer of silicon dioxide (SiO2) is shown to enhance its etch rate in dilute hydrofluoric acid (HF) solution, by up to 9× for an implant dose of 3×1014 cm-2. The formation of sub-lithographic features defined by masked tilted Ar+ implantation into a SiO2 hard-mask layer is experimentally demonstrated. Features with sizes as small as ~21 nm, self-aligned to the lithographically patterned mask, are achieved. As compared with SADP, enhanced patterning by TII requires far fewer and lower-cost process steps and hence is expected to be much more cost-effective.
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Sang Wan Kim, Sang Wan Kim, Peng Zheng, Peng Zheng, Kimihiko Kato, Kimihiko Kato, Leonard Rubin, Leonard Rubin, Tsu-Jae King Liu, Tsu-Jae King Liu, "Enhanced patterning by tilted ion implantation", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771B (22 March 2016); doi: 10.1117/12.2218793; https://doi.org/10.1117/12.2218793
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