1 April 2016 Deep-UV interference lithography combined with masked contact lithography for pixel wiregrid patterns
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Abstract
Pixelated wiregrids are of great interest in polarimetric imagers, but there are no straightforward methods available for combining the uniform exposures of laser interference with a masking system to achieve pixels at different rotational angles. In this work we demonstrate a 266nm deep-UV interference lithography combined with a traditional i-line contact lithography to create such pixels. Aluminum wiregrids are first made, following by etching to create the pixels, and then a planarizing molybdenum film is used before patterning subsequent pixel arrays. The etch contrast between the molybdenum and the aluminum enables the release of the planarizing layer.
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David Lombardo, David Lombardo, Piyush Shah, Piyush Shah, Pengfei Guo, Pengfei Guo, Andrew Sarangan, Andrew Sarangan, "Deep-UV interference lithography combined with masked contact lithography for pixel wiregrid patterns", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771N (1 April 2016); doi: 10.1117/12.2219484; https://doi.org/10.1117/12.2219484
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