1 April 2016 Directed self-assembly of Si-containing and topcoat free block copolymer
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Abstract
Directed self-assembly (DSA) of block copolymers (BCPs) with conventional lithography is being thought as one of the potential patterning solution for future generation devices manufacturing. New BCP platform is required to obtain resolution below 10nm half pitch (HP), better roughness, and defect characteristics than PS-b-PMMA. In this study, we will introduce the newly developed Si-containing high chi BCP which can apply perpendicular lamellar orientation with topcoat free, mild thermal annealing under nitrogen process conditions. It will be also shown in experimental results of graphoepitaxy demonstration for L/S multiplication using new high chi BCP.
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Tasuku Matsumiya, Tasuku Matsumiya, Takehiro Seshimo, Takehiro Seshimo, Tsuyoshi Kurosawa, Tsuyoshi Kurosawa, Hitoshi Yamano, Hitoshi Yamano, Ken Miyagi, Ken Miyagi, Tomotaka Yamada, Tomotaka Yamada, Katsumi Ohmori, Katsumi Ohmori, "Directed self-assembly of Si-containing and topcoat free block copolymer", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771P (1 April 2016); doi: 10.1117/12.2218243; https://doi.org/10.1117/12.2218243
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