1 April 2016 Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer
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Abstract
Si-rich poly((polyhedral oligomeric silsesquioxane) methacrylate)-b-poly(trifluoroethyl methacrylate) (PMAPOSS-b- PTFEMA) was used to form 8-nm half-pitch line and space (L/S) pattern via grapho-epitaxy. Vertical alignment of the lamellae was achieved without using either a neutral layer or top-coating material. Because PMAPOSS-b-PTFEMA forms vertical lamellae on a variety of substrates, we used two types of physical guide structures for grapho-epitaxy; one was a substrate guide and the other was a guide with an embedded under layer. On the substrate guide structure, a fine L/S pattern was obtained with trench widths equal to 3–7 periods of the lamella spacing of the block copolymer, Lo. However, on the embedded under layer guide structure, L/S pattern was observed only with 3 Lo and 4 Lo in trench width. Cross-sectional transmission electron microscope images revealed that a thick PMAPOSS layer was formed under the PMAPOSS-b-PTFEMA L/S pattern. Pattern transfer of the PMAPOSS-b-PTFEMA L/S pattern was prevented by a thick PMAPOSS layer. To achieve pattern transfer to the under layer, optimization of the surface properties is necessary.
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Hironobu Sato, Yusuke Kasahara, Naoko Kihara, Yuriko Seino, Ken Miyagi, Shinya Minegishi, Hitoshi Kubota, Katsutoshi Kobayashi, Hideki Kanai, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Masayuki Shiraishi, Hitoshi Yamano, Satoshi Nomura, Tsukasa Azuma, Teruaki Hayakawa, "Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771S (1 April 2016); doi: 10.1117/12.2218758; https://doi.org/10.1117/12.2218758
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