1 April 2016 Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer
Author Affiliations +
Si-rich poly((polyhedral oligomeric silsesquioxane) methacrylate)-b-poly(trifluoroethyl methacrylate) (PMAPOSS-b- PTFEMA) was used to form 8-nm half-pitch line and space (L/S) pattern via grapho-epitaxy. Vertical alignment of the lamellae was achieved without using either a neutral layer or top-coating material. Because PMAPOSS-b-PTFEMA forms vertical lamellae on a variety of substrates, we used two types of physical guide structures for grapho-epitaxy; one was a substrate guide and the other was a guide with an embedded under layer. On the substrate guide structure, a fine L/S pattern was obtained with trench widths equal to 3–7 periods of the lamella spacing of the block copolymer, Lo. However, on the embedded under layer guide structure, L/S pattern was observed only with 3 Lo and 4 Lo in trench width. Cross-sectional transmission electron microscope images revealed that a thick PMAPOSS layer was formed under the PMAPOSS-b-PTFEMA L/S pattern. Pattern transfer of the PMAPOSS-b-PTFEMA L/S pattern was prevented by a thick PMAPOSS layer. To achieve pattern transfer to the under layer, optimization of the surface properties is necessary.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hironobu Sato, Hironobu Sato, Yusuke Kasahara, Yusuke Kasahara, Naoko Kihara, Naoko Kihara, Yuriko Seino, Yuriko Seino, Ken Miyagi, Ken Miyagi, Shinya Minegishi, Shinya Minegishi, Hitoshi Kubota, Hitoshi Kubota, Katsutoshi Kobayashi, Katsutoshi Kobayashi, Hideki Kanai, Hideki Kanai, Katsuyoshi Kodera, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Yoshiaki Kawamonzen, Masayuki Shiraishi, Masayuki Shiraishi, Hitoshi Yamano, Hitoshi Yamano, Satoshi Nomura, Satoshi Nomura, Tsukasa Azuma, Tsukasa Azuma, Teruaki Hayakawa, Teruaki Hayakawa, } "Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771S (1 April 2016); doi: 10.1117/12.2218758; https://doi.org/10.1117/12.2218758

Back to Top