24 March 2016 Improving OCD time to solution using Signal Response Metrology
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Abstract
In recent technology nodes, advanced process and novel integration scheme have challenged the precision limits of conventional metrology; with critical dimensions (CD) of device reduce to sub-nanometer region. Optical metrology has proved its capability to precisely detect intricate details on the complex structures, however, conventional RCWA-based (rigorous coupled wave analysis) scatterometry has the limitations of long time-to-results and lack of flexibility to adapt to wide process variations. Signal Response Metrology (SRM) is a new metrology technique targeted to alleviate the consumption of engineering and computation resources by eliminating geometric/dispersion modeling and spectral simulation from the workflow. This is achieved by directly correlating the spectra acquired from a set of wafers with known process variations encoded. In SPIE 2015, we presented the results of SRM application in lithography metrology and control [1], accomplished the mission of setting up a new measurement recipe of focus/dose monitoring in hours. This work will demonstrate our recent field exploration of SRM implementation in 20nm technology and beyond, including focus metrology for scanner control; post etch geometric profile measurement, and actual device profile metrology.
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Fang Fang, Fang Fang, Xiaoxiao Zhang, Xiaoxiao Zhang, Alok Vaid, Alok Vaid, Stilian Pandev, Stilian Pandev, Dimitry Sanko, Dimitry Sanko, Vidya Ramanathan, Vidya Ramanathan, Kartik Venkataraman, Kartik Venkataraman, Ronny Haupt, Ronny Haupt, "Improving OCD time to solution using Signal Response Metrology", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977806 (24 March 2016); doi: 10.1117/12.2219775; https://doi.org/10.1117/12.2219775
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