Gaining insight into effective metrology height through the use of a compact CDSEM model for lithography simulation

Chao Fang; Trey Graves; Alessandro Vaglio Pret; Stewart Robertson; Mark Smith

doi:10.1117/12.2219776

24 March 2016 Gaining insight into effective metrology height through the use of a compact CDSEM model for lithography simulation

Chao Fang, Trey Graves, Alessandro Vaglio Pret, Stewart Robertson, Mark Smith

Author Affiliations +

Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97780B (2016) https://doi.org/10.1117/12.2219776
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Computer simulation of lithographic performance, including resist CD, film thickness, sidewall angle and profile has been extensively studied during the past three decades. Lithography simulation has been widely adopted as an enabling technology for high-volume chip manufacturing. However, measurement artifacts arising from CD-SEM metrology are typically ignored in simulation, due to the difficulty of accurately modeling the effect of the CD-SEM at acceptable computational speed. In this paper, we demonstrate how CD measurements can be improved by including a fast, compact CD-SEM model. For example, the variation in effective resist metrology height along contour lines extracted from a simulated CD-SEM image is characterized for a range of structures through focus. We also demonstrate how SEM settings affect the shape of extracted SEM contour and metrology height at contour edge. The Edge Placement Error (EPE) caused by SEM artifact is carefully studied.

Citation Download Citation

Chao Fang, Chao Fang, Trey Graves, Trey Graves, Alessandro Vaglio Pret, Alessandro Vaglio Pret, Stewart Robertson, Stewart Robertson, Mark Smith, Mark Smith, "Gaining insight into effective metrology height through the use of a compact CDSEM model for lithography simulation", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780B (24 March 2016); doi: 10.1117/12.2219776; https://doi.org/10.1117/12.2219776

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