Characterization of cross-sectional profile of resist L/S and hole pattern using CD-SAXS

Y. Ito; A. Higuchi; K. Omote

doi:10.1117/12.2218983

21 April 2016 Characterization of cross-sectional profile of resist L/S and hole pattern using CD-SAXS

Y. Ito, A. Higuchi, K. Omote

Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97780L (2016) https://doi.org/10.1117/12.2218983
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Critical dimension small-angle x-ray scattering (CD-SAXS) with a grazing-incidence geometry, which was recently developed by the authors, has been successfully applied to the cross-sectional profile measurements of different types of L/S- and hole-type patterns on photoresist surfaces. We have calculated diffraction intensities from the nanostructures based on a distorted wave Born approximation method to take the refraction and the reflection at the interfaces between layers into account, and the average cross-sectional profiles have been analyzed by a model-based least-square method. From the precise analyses, slight cross-sectional profile differences of a few nanometers scale generated by using different material and exposure conditions have been identified. The obtained cross-sectional profiles showed good agreements with the results obtained by cross-sectional scanning electron microscopy (SEM). These results demonstrate the applicability of the CD-SAXS to the nanoscale structural metrology. It is expected that the CD-SAXS is also applicable to even smaller scale structures, e.g., those of EUV, NIL, or DSA, as the x-ray wavelength is well shorter than the critical lengths of these structures.

Citation Download Citation

Y. Ito, A. Higuchi, and K. Omote "Characterization of cross-sectional profile of resist L/S and hole pattern using CD-SAXS", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780L (21 April 2016); https://doi.org/10.1117/12.2218983

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