24 March 2016 XPS-XRF hybrid metrology enabling FDSOI process
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Abstract
Planar fully-depleted silicon-on-insulator (FDSOI) technology potentially offers comparable transistor performance as FinFETs. pFET FDOSI devices are based on a silicon germanium (cSiGe) layer on top of a buried oxide (BOX). Ndoped interfacial layer (IL), high-k (HfO2) layer and the metal gate stacks are then successively built on top of the SiGe layer. In-line metrology is critical in precisely monitoring the thickness and composition of the gate stack and associated underlying layers in order to achieve desired process control. However, any single in-line metrology technique is insufficient to obtain the thickness of IL, high-k, cSiGe layers in addition to Ge% and N-dose in one single measurement. A hybrid approach is therefore needed that combines the capabilities of more than one measurement technique to extract multiple parameters in a given film stack. This paper will discuss the approaches, challenges, and results associated with the first-in-industry implementation of XPS-XRF hybrid metrology for simultaneous detection of high-k thickness, IL thickness, N-dose, cSiGe thickness and %Ge, all in one signal measurement on a FDSOI substrate in a manufacturing fab. Strong correlation to electrical data for one or more of these measured parameters will also be presented, establishing the reliability of this technique.
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Mainul Hossain, Mainul Hossain, Ganesh Subramanian, Ganesh Subramanian, Dina Triyoso, Dina Triyoso, Jeremy Wahl, Jeremy Wahl, Timothy Mcardle, Timothy Mcardle, Alok Vaid, Alok Vaid, A. F. Bello, A. F. Bello, Wei Ti Lee, Wei Ti Lee, Mark Klare, Mark Klare, Michael Kwan, Michael Kwan, Heath Pois, Heath Pois, Ying Wang, Ying Wang, Tom Larson, Tom Larson, "XPS-XRF hybrid metrology enabling FDSOI process", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780N (24 March 2016); doi: 10.1117/12.2219748; https://doi.org/10.1117/12.2219748
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