Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

Gian Francesco Lorusso; Osamu Inoue; Takeyoshi Ohashi; Efrain Altamirano Sanchez; Vassilios Constantoudis; Shunsuke Koshihara

doi:10.1117/12.2218863

18 March 2016 Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

Gian Francesco Lorusso, Osamu Inoue, Takeyoshi Ohashi, Efrain Altamirano Sanchez, Vassilios Constantoudis, Shunsuke Koshihara

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Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97780V (2016) https://doi.org/10.1117/12.2218863
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Line edge roughness (LER) and line width roughness (LWR) are analyzed during pattern transfer in a self-aligned quadruple patterning (SAQP) process. This patterning process leads to a final pitch of 22.5nm, relevant for N7/N5 technologies. Measurements performed by CD SEM (Critical Dimension Scanning Electron Microscope) using different settings in terms of averaging, field of view, and pixel size are compared with reference metrology performed by planar TEM and three-Dimensional Atomic Force Microscope (3D AFM) for each patterning process step in order to investigate the optimal condition for an in-line LWR characterization. Pattern wiggling is als0 quantitatively analyzed during LER/LWR transfer in the SAQP process.

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Gian Francesco Lorusso, Osamu Inoue, Takeyoshi Ohashi, Efrain Altamirano Sanchez, Vassilios Constantoudis, and Shunsuke Koshihara "Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97780V (18 March 2016); https://doi.org/10.1117/12.2218863

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