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18 March 2016 Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry
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Optical metrology techniques such as ellipsometry and reflectometry are very powerful for routine process monitoring and control in the modern semiconductor manufacturing industry. However, both methods rely on optical modeling therefore, the optical properties of all materials in the stack need to be characterized a priori or determined during characterization. Some processes such as ion implantation and subsequent annealing produce slight variations in material properties within wafer, wafer-to-wafer, and lot-to-lot; such variation can degrade the dimensional measurement accuracy for both unpatterned optical measurements as well as patterned (2D and 3D) scatterometry measurements. These variations can be accounted for if the optical model of the structure under investigation allows one to extract not just dimensional but also material information already residing within the optical spectra. This paper focuses on modeling of ion implanted and annealed poly Si stacks typically used in high-k technology. Monitoring of ion implantation is often a blind spot in mass production due to capability issues and other limitations of common methods. Typically, the ion implantation dose can be controlled by research-grade ellipsometers with extended infrared range. We demonstrate that multi-channel spectroscopic reflectometry can also be used for ion implant monitoring in the mass-production environment. Our findings are applicable across all technology nodes.
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Peter Ebersbach, Adam M. Urbanowicz, Dmitry Likhachev, and Carsten Hartig "Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977812 (18 March 2016);

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