24 March 2016 Lithography aware overlay metrology target design method
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Abstract
We present a metrology target design (MTD) framework based on co-optimizing lithography and metrology performance. The overlay metrology performance is strongly related to the target design and optimizing the target under different process variations in a high NA optical lithography tool and measurement conditions in a metrology tool becomes critical for sub-20nm nodes. The lithography performance can be quantified by device matching and printability metrics, while accuracy and precision metrics are used to quantify the metrology performance. Based on using these metrics, we demonstrate how the optimized target can improve target printability while maintaining the good metrology performance for rotated dipole illumination used for printing a sub-100nm diagonal feature in a memory active layer. The remaining challenges and the existing tradeoff between metrology and lithography performance are explored with the metrology target designer’s perspective. The proposed target design framework is completely general and can be used to optimize targets for different lithography conditions. The results from our analysis are both physically sensible and in good agreement with experimental results.
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Myungjun Lee, Myungjun Lee, Mark D. Smith, Mark D. Smith, Joonseuk Lee, Joonseuk Lee, Mirim Jung, Mirim Jung, Honggoo Lee, Honggoo Lee, Youngsik Kim, Youngsik Kim, Sangjun Han, Sangjun Han, Michael E. Adel, Michael E. Adel, Kangsan Lee, Kangsan Lee, Dohwa Lee, Dohwa Lee, Dongsub Choi, Dongsub Choi, Zephyr Liu, Zephyr Liu, Tal Itzkovich, Tal Itzkovich, Vladimir Levinski, Vladimir Levinski, Ady Levy, Ady Levy, } "Lithography aware overlay metrology target design method", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781L (24 March 2016); doi: 10.1117/12.2218653; https://doi.org/10.1117/12.2218653
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