25 March 2016 Material analysis techniques used to drive down in-situ mask contamination sources
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Abstract
Using SEM-EDS analysis on small (< 200 nm) particles is challenging, especially on a substrate with multiple background elements present. We will show a methodology combining three techniques to get the most information out of small particles. This method combines low energy EDS with a nontraditional approach to improve statistics in EDS and elemental mapping. This methodology is required for ASML’s EUV platform, the NXE scanner to continue system improvement for a system showing already low defect count. The poor particle statistics on particle defects lead to a limited amount of particles available for diagnostics, which implies that all information on particle characteristics should be used for diagnostics.
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Harm Dillen, Gerard Rebel, Jennifer Massier, Dominika Grodzinka, Richard J. Bruls, "Material analysis techniques used to drive down in-situ mask contamination sources", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781N (25 March 2016); doi: 10.1117/12.2220400; https://doi.org/10.1117/12.2220400
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