24 March 2016 3D-profile measurement of advanced semiconductor features by reference metrology
Author Affiliations +
Abstract
A method of sub-nanometer uncertainty for the 3D-profile measurement using TEM (Transmission Electron Microscope) images is proposed to standardize 3D-profile measurement through reference metrology. The proposed method has been validated for profiles of Si lines, photoresist features and advanced-FinFET (Fin-shaped Field-Effect Transistor) features in our previous investigations. However, efficiency of 3D-profile measurement using TEM is limited by measurement time including processing of the sample. In this article, we demonstrate a novel on-wafer 3D-profile metrology as "FIB-to-CDSEM method" with FIB (Focused Ion Beam) slope cut and CD-SEM (Critical Dimension Secondary Electron Microscope) measuring. Using the method, a few micrometer wide on a wafer is coated and cut by 45 degree slope using FIB tool. Then, the wafer is transferred to CD-SEM to measure the cross section image by top down CD-SEM measurement. We apply FIB-to-CDSEM method to CMOS sensor device. 3D-profile and 3D-profile parameters such as top line width and side wall angles of CMOS sensor device are evaluated. The 3D-profile parameters also are measured by TEM images as reference metrology. We compare the 3D-profile parameters by TEM method and FIB-to-CDSEM method. The average values and correlations on the wafer are agreed well between TEM and FIB-to- CDSEM methods.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kiyoshi Takamasu, Kiyoshi Takamasu, Yuuki Iwaki, Yuuki Iwaki, Satoru Takahashi, Satoru Takahashi, Hiroki Kawada, Hiroki Kawada, Masami Ikota, Masami Ikota, Gian F. Lorusso, Gian F. Lorusso, Naoto Horiguchi, Naoto Horiguchi, "3D-profile measurement of advanced semiconductor features by reference metrology", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97781T (24 March 2016); doi: 10.1117/12.2218496; https://doi.org/10.1117/12.2218496
PROCEEDINGS
8 PAGES


SHARE
Back to Top