18 March 2016 Comparison of left and right side line edge roughness in lithography
Author Affiliations +
Abstract
The left side and right side line edge roughnesses (LER) of a line are compared for different conditions, such as through pitch, through critical dimension (CD), from horizontal to vertical line direction, from litho to etch. The investigation shows that the left and right side LER from lithography process are the same, however, the metrology can cause a 4-25% increase in the measured right side LER. The LER difference is related to the CDSEM e-beam scan direction.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Sun, Lei Sun, Nicole Saulnier, Nicole Saulnier, Genevieve Beique, Genevieve Beique, Erik Verduijn, Erik Verduijn, Wenhui Wang, Wenhui Wang, Yongan Xu, Yongan Xu, Hao Tang, Hao Tang, Yulu Chen, Yulu Chen, Ryoung-han Kim, Ryoung-han Kim, John Arnold, John Arnold, Nelson Felix, Nelson Felix, Matthew Colburn, Matthew Colburn, } "Comparison of left and right side line edge roughness in lithography", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977822 (18 March 2016); doi: 10.1117/12.2219665; https://doi.org/10.1117/12.2219665
PROCEEDINGS
9 PAGES


SHARE
Back to Top