These image-and-design integration methodologies include contour extraction and alignment to design, contour-to-design defect detection, defective/nuisance pattern retrieval, confirmed defective/nuisance pattern overlay with inspection data, and modulation-related weak-pattern ranking. The technique we present provides greater automation, from defect detection to defective pattern retrieval to decision-making steps, that allows for statistically summarized results and increased coverage of the wafer to be achieved without an adverse impact on cycle time. Statistically summarized results, lead to objective assessments of the output; and increased coverage, in turn, leads to a more comprehensive assessment of the impact of each pattern defect and each focus/exposure modulation. Overall, this leads to a more accurate determination of the process window.
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Qian Xie, Panneerselvam Venkatachalam, Julie Lee, Zhijin Chen, Khurram Zafar, "Design guided data analysis for summarizing systematic pattern defects and process window," Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782D (8 March 2016);