Probe microscopy for metrology of next generation devices

Andrew D. L. Humphris; Bin Zhao; David Bastard; Benjamin Bunday

doi:10.1117/12.2219035

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18 March 2016 Probe microscopy for metrology of next generation devices

Andrew D. L. Humphris, Bin Zhao, David Bastard, Benjamin Bunday

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Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97782L (2016) https://doi.org/10.1117/12.2219035
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

As device geometries shrink and the number of transistors on the wafer grows, new metrology solutions are required to support the development and production of next generation structures for the 10 nm node and beyond. This paper presents an innovative probe based microscope, the Rapid Probe Microscope (RPM), which is capable of obtaining nondestructive high resolution sub-nm information in all 3 dimensions and in a vacuum environment. The RPM is a platform supporting a novel probe detection and actuation system. It enables new imaging modes which are optimized for profiling narrow high aspect ratio structures as found in semiconductor devices. Additionally, the RPM can be operated in a vacuum environment allowing in-situ hybrid metrology solutions, for example operating alongside a CD or defect review SEM. Results are presented showing the imaging of thin lines and trenches, < 20 nm in width, using both a SEM and RPM to provide complementary information about the lateral and vertical dimensions of the structures. Comparison of images collected with different probes and at different sample locations demonstrates the ability of the RPM to operate consistently with long probe life and at high speed which is required for use in the High Volume Manufacturing (HVM) environment.

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Andrew D. L. Humphris, Bin Zhao, David Bastard, and Benjamin Bunday "Probe microscopy for metrology of next generation devices", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782L (18 March 2016); https://doi.org/10.1117/12.2219035

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