Translator Disclaimer
8 March 2016 Comparison study of diffraction based overlay and image based overlay measurements on programmed overlay errors
Author Affiliations +
Abstract
In this paper we will present the comparison study of these two methods on programmed errors of critical layers of 14nm technology node. Programmed OVL errors were made on certain fields during the exposure. Full coverage OVL measurements were performed using both IBO and DBO. Linear, HOPC and iHOPC modeling has been done from non-programmed fields. Then modeling has been subtracted from these certain programmed fields, and Reticle contribution was also calculated and subtracted. In this study, metrology measurement accuracy and stability can be feasible and more accurate OVL control is enabled by selecting better OVL measurement techniques.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Haiyong Gao, Woong Jae Chung, Nyan Aung, Lokesh Subramany, Pavan Samudrala, and Juan-Manuel Gomez "Comparison study of diffraction based overlay and image based overlay measurements on programmed overlay errors", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782Q (8 March 2016); https://doi.org/10.1117/12.2218163
PROCEEDINGS
8 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Overlay control for nanoimprint lithography
Proceedings of SPIE (April 03 2017)
Size matters in overlay measurement
Proceedings of SPIE (April 05 2012)
Predictive process control for sub-0.2-um lithography
Proceedings of SPIE (June 02 2000)
Analysis Of Overlay Distortion Patterns
Proceedings of SPIE (January 01 1988)

Back to Top