For focus targeting, the current method involves using a dedicated focus-exposure matrix (FEM) on all scanners, resulting in lengthy analysis times and uncertainty in the best focus. The DBF method allows the measurement to occur on the IM system, on a regular production wafer, and at the same time as the exposure. This results in a cycle time gain as well as a less subjective determination of best focus. A third application aims to use the novel onproduct focus metrology data in order to apply per-exposure focus corrections to the scanner. These corrections are particularly effective at the edge of the wafer, where systematic layer-dependent effects can be removed using DBFbased scanner feedback.
This paper will discuss the development of a methodology to accomplish each of these applications in a high-volume production environment. The new focus metrology method, sampling schemes, feedback mechanisms and analysis methods lead to improved focus control, as well as earlier detection of failures.