24 March 2016 An evaluation of edge roll off on 28nm FDSOI (fully depleted silicon on insulator) product
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Abstract
On product wafers, scanner focus is better controlled at the wafer center than at the wafer edge. This is due, in a large part, to edge roll off effects [1]. This paper quantifies the impact of edge roll off on scanner levelling non-correctable errors and correlates this to on-product effects. The main contributors and mitigation methods are also discussed for a NXT:1950 scanner.
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M. Gatefait, B. Le-Gratiet, C. Prentice, T. Hasan, "An evaluation of edge roll off on 28nm FDSOI (fully depleted silicon on insulator) product", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97782Y (24 March 2016); doi: 10.1117/12.2218859; https://doi.org/10.1117/12.2218859
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