12 April 2016 Automated klarf-based defect inspection by electron-beam inspection tool: a novel approach to inline monitoring and/or process change validation
Author Affiliations +
Abstract
We report an optical inspection guided e-beam inspection method for inline monitoring and/or process change validation. We illustrate its advantage through the case of detection of buried voids/unlanding vias, which are identified as yield-limiting defects to cause electrical connectivity failures. We inspected a back end of line (BEOL) wafer after the copper electro plating and chemical mechanical planarization (CMP) process with bright field inspection (BFI) and employed EBI to inspect full wafer with guidance of BFI klarf file. The dark voltage contrast defects were detected and confirmed as buried voids by transmission electron microscopy (TEM).
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Na Cai, Na Cai, Xuefeng Zeng, Xuefeng Zeng, Kevin Wu, Kevin Wu, Ho Young Song, Ho Young Song, Weihong Gao, Weihong Gao, Qing Tian, Qing Tian, Chris Lei, Chris Lei, Kewen Gao, Kewen Gao, Liuchen Wang, Liuchen Wang, Yan Zhao, Yan Zhao, "Automated klarf-based defect inspection by electron-beam inspection tool: a novel approach to inline monitoring and/or process change validation", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977834 (12 April 2016); doi: 10.1117/12.2218887; https://doi.org/10.1117/12.2218887
PROCEEDINGS
6 PAGES


SHARE
Back to Top