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8 March 2016 Sensitivity study and parameter optimization of OCD tool for 14nm finFET process
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Optical critical dimension (OCD) measurement has been widely demonstrated as an essential metrology method for monitoring advanced IC process in the technology node of 90 nm and beyond. However, the rapidly shrunk critical dimensions of the semiconductor devices and the increasing complexity of the manufacturing process bring more challenges to OCD. The measurement precision of OCD technology highly relies on the optical hardware configuration, spectral types, and inherently interactions between the incidence of light and various materials with various topological structures, therefore sensitivity analysis and parameter optimization are very critical in the OCD applications. This paper presents a method for seeking the optimum sensitive measurement configuration to enhance the metrology precision and reduce the noise impact to the greatest extent. In this work, the sensitivity of different types of spectra with a series of hardware configurations of incidence angles and azimuth angles were investigated. The optimum hardware measurement configuration and spectrum parameter can be identified. The FinFET structures in the technology node of 14 nm were constructed to validate the algorithm. This method provides guidance to estimate the measurement precision before measuring actual device features and will be beneficial for OCD hardware configuration.
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Zhensheng Zhang, Huiping Chen, Shiqiu Cheng, Yunkun Zhan, Kun Huang, Yaoming Shi, and Yiping Xu "Sensitivity study and parameter optimization of OCD tool for 14nm finFET process", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97783A (8 March 2016);

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