The trend in microelectronics fabrication is to produce nano-features measuring down to 10 nm and finer. The PPT levels of organic and inorganic contaminants in the photoresist, solvent and cleaning solutions are becoming a major processing variable affecting the process capability and defectivity. The photoresist usually contains gels, metals, and particulates that could interfere with the lithography process and cause microbridging defects. Nano filters of 5 nm polypropylene, 5 nm polyethylene, and 10 nm natural nylon were used to filter propylene glycol methyl ether acetate PGMEA containing 50 ppb of Na, Mg, Al, Ca, Cr, Mn, Fe, Cu, Zn, and Pb. All filters were effective in removing trivalent Al, Cr, and Fe metals indicating the mechanism for their removal as mechanical sieving. However, the nylon was also very effective in removing the divalent metals showing adsorptive properties. Furthermore, the metal removal of the nylon membrane was studied as a function of surface chemistry. Natural and charged 40 nm nylon membranes were tested and found that charged nylon is more effective for metal removal.