A study of lateral roughness evaluation through critical-dimension small angle x-ray scattering (CD-SAXS)

G. Freychet; C. Cadoux; Y. Blancquaert; S. Rey; M. Maret; P. Gergaud

doi:10.1117/12.2235102

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8 March 2016 A study of lateral roughness evaluation through critical-dimension small angle x-ray scattering (CD-SAXS)

G. Freychet, C. Cadoux, Y. Blancquaert, S. Rey, M. Maret, P. Gergaud

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Proceedings Volume 9778, Metrology, Inspection, and Process Control for Microlithography XXX; 97783V (2016) https://doi.org/10.1117/12.2235102
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

CD-SAXS capabilities are evaluated using a Ultra-SAXS setup allowing measurement of large reciprocal space maps with a high resolution configuration. The measured structures are: i) Tungsten lines gratings and ii) Si-ARC (Silicon Antireflective Coating) lines gratings both deposited onto a thin silicon membrane (100 nm thick). Advanced data reduction is performed thanks to reverse Monte Carlo simulations. Line period, line width, sidewall angle are extracted. Stitching effect was also detected and its period was determined. Peak broadening with peak order is discussed in terms of period dispersion and cumulative roughness. Amplitude and period of lateral roughness is also determined through complementary measurements performed at ESRF.

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G. Freychet, C. Cadoux, Y. Blancquaert, S. Rey, M. Maret, and P. Gergaud "A study of lateral roughness evaluation through critical-dimension small angle x-ray scattering (CD-SAXS)", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 97783V (8 March 2016); https://doi.org/10.1117/12.2235102

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