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21 March 2016 Cross sections of EUV PAGs: influence of concentration, electron energy, and structure
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Optimizing the photochemistry of extreme ultraviolet (EUV) photoresists should provide faster, more efficient resists which would lead to greater throughput in manufacturing. The fundamental reaction mechanisms in EUV resists are believed to be due to interactions with energetic electrons liberated by ionization. Identifying the likelihood (or cross section) of how these photoelectrons interact with resist components is critical to optimizing the performance of EUV resists. Chemically amplified resists utilize photoacid generators (PAGs) to improve sensitivity; measuring the cross section of electron induced decomposition of different PAGs will provide insight into developing new resist materials. To study the interactions of photoelectrons generated by EUV absorption, photoresists were exposed to electron beams at energies between 80 and 250 eV. The reactions between PAG molecules and electrons were measured using a mass spectrometer to monitor the levels of small molecules produced by PAG decomposition that outgassed from the film. Comparing the cross sections of a variety of PAG molecules can provide insight into the relationship between chemical structure and reactivity to the electrons in their environments. This research is a part of a larger SEMATECH research program to understand the fundamentals of resist exposures to help in the development of new, better performing EUV resists.
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Steven Grzeskowiak, Amrit Narasimhan, Liam Wisehart, Jonathon Schad, Mark Neisser, Leonidas E. Ocola, Robert L. Brainard, and Greg Denbeaux "Cross sections of EUV PAGs: influence of concentration, electron energy, and structure", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97790C (21 March 2016);

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