25 March 2016 Metal oxide EUV photoresist performance for N7 relevant patterns and processes
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Abstract
Inpria continues to leverage novel metal oxide materials to produce high resolution photoresists for EUV lithography with high optical density and etch resistance. Our resists have previously demonstrated 13nm line/space patterns at 35 mJ/cm2, with extendibility to 10nm half-pitch.1 We have continued to improve photospeed and in this work we provide an update on imaging performance. Since practical patterns for EUV layers will be more complicated than line/space patterns, we also expand on our previous work by demonstrating 2D resist performance using N7 (7nm node) contact and block mask patterns on full field scanners. A resist model has been created and using this model comparisons are made between a metal oxide resist and CAR platforms. Based on this physical model, the impact of shot noise is examined in relation to realistic 2D features. Preliminary data on the effect on OPC of using a non-chemically amplified resist are also presented.
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Jason Stowers, Jeremy Anderson, Brian Cardineau, Benjamin Clark, Peter De Schepper, Joseph Edson, Michael Greer, Kai Jiang, Michael Kocsis, Stephen Meyers, Alan Telecky, Andrew Grenville, Danilo De Simone, Werner Gillijns, Geert Vandenberghe, "Metal oxide EUV photoresist performance for N7 relevant patterns and processes", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977904 (25 March 2016); doi: 10.1117/12.2219527; https://doi.org/10.1117/12.2219527
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