25 March 2016 Novel high sensitivity EUV photoresist for sub-7nm node
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Abstract
Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.
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Tomoki Nagai, Hisashi Nakagawa, Takehiko Naruoka, Seiichi Tagawa, Akihiro Oshima, Seiji Nagahara, Gosuke Shiraishi, Kosuke Yoshihara, Yuichi Terashita, Yukie Minekawa, Elizabeth Buitrago, Yasin Ekinci, Oktay Yildirim, Marieke Meeuwissen, Rik Hoefnagels, Gijsbert Rispens, Coen Verspaget, Raymond Maas, "Novel high sensitivity EUV photoresist for sub-7nm node", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977908 (25 March 2016); doi: 10.1117/12.2218936; https://doi.org/10.1117/12.2218936
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