25 March 2016 Novel high sensitivity EUV photoresist for sub-7nm node
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Extreme ultraviolet lithography (EUVL) has been recognized as the most promising candidate for the manufacture of semiconductor devices for the 7 nm node and beyond. A key point in the successful introduction of EUV lithography in high volume manufacture (HVM) is the effective EUV dose utilization while simultaneously realizing ultra-high resolution and low line edge roughness (LER). Here we show EUV resist sensitivity improvement with the use of a photosensitized chemically amplified resist PSCARTM system. The evaluation of this new chemically amplified resist (CAR) as performed using EUV interference lithography (EUV-IL) is described and the fundamentals are discussed.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tomoki Nagai, Tomoki Nagai, Hisashi Nakagawa, Hisashi Nakagawa, Takehiko Naruoka, Takehiko Naruoka, Seiichi Tagawa, Seiichi Tagawa, Akihiro Oshima, Akihiro Oshima, Seiji Nagahara, Seiji Nagahara, Gosuke Shiraishi, Gosuke Shiraishi, Kosuke Yoshihara, Kosuke Yoshihara, Yuichi Terashita, Yuichi Terashita, Yukie Minekawa, Yukie Minekawa, Elizabeth Buitrago, Elizabeth Buitrago, Yasin Ekinci, Yasin Ekinci, Oktay Yildirim, Oktay Yildirim, Marieke Meeuwissen, Marieke Meeuwissen, Rik Hoefnagels, Rik Hoefnagels, Gijsbert Rispens, Gijsbert Rispens, Coen Verspaget, Coen Verspaget, Raymond Maas, Raymond Maas, "Novel high sensitivity EUV photoresist for sub-7nm node", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977908 (25 March 2016); doi: 10.1117/12.2218936; https://doi.org/10.1117/12.2218936

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