21 March 2016 High speed AFM studies of 193 nm immersion photoresists during TMAH development
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Abstract
In this paper we report on our studies of the dynamic process of resist development in real time. Using High Speed – Atomic Force Microscopy (HS-AFM) in dilute developer solution, changes in morphology and nanomechanical properties of patterned resist were monitored. The Bruker Dimension FastScan AFMTM was applied to analyze 193 nm acrylic-based immersion resists in developer. HS-AFM operated in Peak Force mapping mode allowed for concurrent measurements of image topography resist stiffness, adhesion to AFM probe and deformation during development. In our studies we focused on HS-AFM topography data as it readily revealed detailed information about initial resist morphology, followed by a resist swelling process and eventual dissolution of the exposed resist areas. HS-AFM showed potential for tracking and understanding development of patterned resist films and can be useful in evaluating the dissolution properties of different resist designs.
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Johnpeter Ngunjiri, Johnpeter Ngunjiri, Greg Meyers, Greg Meyers, Jim Cameron, Jim Cameron, Yasuhiro Suzuki, Yasuhiro Suzuki, Hyun Jeon, Hyun Jeon, Dave Lee, Dave Lee, Kwang Mo Choi, Kwang Mo Choi, Jung Woo Kim, Jung Woo Kim, Kwang-Hwyi Im, Kwang-Hwyi Im, Hae-Jin Lim, Hae-Jin Lim, "High speed AFM studies of 193 nm immersion photoresists during TMAH development", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 97790W (21 March 2016); doi: 10.1117/12.2218956; https://doi.org/10.1117/12.2218956
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