25 March 2016 High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
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Abstract
Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.
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HsinYu Tsai, Hiroyuki Miyazoe, Ankit Vora, Teddie Magbitang, Noel Arellano, Chi-Chun Liu, Michael J. Maher, William J. Durand, Simon J. Dawes, James J. Bucchignano, Lynne Gignac, Daniel P. Sanders, Eric A. Joseph, Matthew E. Colburn, C. Grant Willson, Christopher J. Ellison, Michael A. Guillorn, "High chi block copolymer DSA to improve pattern quality for FinFET device fabrication", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977910 (25 March 2016); doi: 10.1117/12.2219544; https://doi.org/10.1117/12.2219544
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