25 March 2016 High chi block copolymer DSA to improve pattern quality for FinFET device fabrication
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Directed self-assembly (DSA) with block-copolymers (BCP) is a promising lithography extension technique to scale below 30nm pitch with 193i lithography. Continued scaling toward 20nm pitch or below will require material system improvements from PS-b-PMMA. Pattern quality for DSA features, such as line edge roughness (LER), line width roughness (LWR), size uniformity, and placement, is key to DSA manufacturability. In this work, we demonstrate finFET devices fabricated with DSA-patterned fins and compare several BCP systems for continued pitch scaling. Organic-organic high chi BCPs at 24nm and 21nm pitches show improved low to mid-frequency LER/LWR after pattern transfer.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
HsinYu Tsai, HsinYu Tsai, Hiroyuki Miyazoe, Hiroyuki Miyazoe, Ankit Vora, Ankit Vora, Teddie Magbitang, Teddie Magbitang, Noel Arellano, Noel Arellano, Chi-Chun Liu, Chi-Chun Liu, Michael J. Maher, Michael J. Maher, William J. Durand, William J. Durand, Simon J. Dawes, Simon J. Dawes, James J. Bucchignano, James J. Bucchignano, Lynne Gignac, Lynne Gignac, Daniel P. Sanders, Daniel P. Sanders, Eric A. Joseph, Eric A. Joseph, Matthew E. Colburn, Matthew E. Colburn, C. Grant Willson, C. Grant Willson, Christopher J. Ellison, Christopher J. Ellison, Michael A. Guillorn, Michael A. Guillorn, "High chi block copolymer DSA to improve pattern quality for FinFET device fabrication", Proc. SPIE 9779, Advances in Patterning Materials and Processes XXXIII, 977910 (25 March 2016); doi: 10.1117/12.2219544; https://doi.org/10.1117/12.2219544

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