A further optimization is reported for “small” cubic silsequioxane molecules. Again single component films show independent to applied film preparation techniques bad film forming properties due to the high crystallinity of the symmetric cubic silsequioxane molecules. But coevaporation of the phenyl substituted octaphenylsilsequioxane combined with the fully aromatic 2,2',7,7'-tetraphenyl-9,9'-spirobi[fluorene] results in stable amorphous thin films. tSPL investigations demonstrate the patternability by writing high resolution line features of 20 nm half pitch. An important advantage of such a silicon rich resist material is that it can be directly converted to SiO2, yielding to a patterned hardmask of SiO2. This proof of principle is demonstrated and an efficient pattern transfer of 60 nm half pitch line into the underlying HM8006 is reported.
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